PD - C. This benefit, combined with the fast switching speed and. The TO package is universally preferred for all commercial-industrial. The low. Absolute Maximum Ratings. T STG.
|Published (Last):||21 March 2011|
|PDF File Size:||17.57 Mb|
|ePub File Size:||7.65 Mb|
|Price:||Free* [*Free Regsitration Required]|
PD - A. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO contribute to its wide acceptance throughout the industry.
Absolute Maximum Ratings. Pulsed Drain Current. Power Dissipation. Linear Derating Factor. Gate-to-Source Voltage. Avalanche Current. Repetitive Avalanche Energy. Operating Junction and Storage Temperature Range. Soldering Temperature, for 10 seconds. Mounting torque, or M3 srew. Thermal Resistance. Case-to-Sink, Flat, Greased Surface. BR DSS. Drain-to-Source Breakdown Voltage. Breakdown Voltage Temp. DS on. Static Drain-to-Source On-Resistance. GS th. Gate Threshold Voltage. Forward Transconductance.
Drain-to-Source Leakage Current. Gate-to-Source Forward Leakage. Gate-to-Source Reverse Leakage. Total Gate Charge. Gate-to-Source Charge. Gate-to-Drain "Miller" Charge. Turn-On Delay Time. Rise Time.
Turn-Off Delay Time. Fall Time. Internal Drain Inductance. Between lead, 6mm 0. Internal Source Inductance. Input Capacitance. Output Capacitance. Reverse Transfer Capacitance. Single Pulse Avalanche Energy. Source-Drain Ratings and Characteristics. Continuous Source Current Body Diode. Pulsed Source Current Body Diode.
Diode Forward Voltage. Reverse Recovery Time. Reverse Recovery Charge. Forward Turn-On Time. Repetitive rating; pulse width limited by max. See fig. This is a typical value at device destruction and represents operation outside rated limits. Fig 1. Typical Output Characteristics. Fig 3. Typical Transfer Characteristics. Fig 4. Normalized On-Resistance Vs. Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage.
Fig 7. Fig 6. Typical Gate Charge Vs. Fig 8. Maximum Safe Operating Area. Fig 9. Maximum Drain Current Vs. Case Temperature.
Fig Fig 13a. Basic Gate Charge Waveform. Fig 12c. Maximum Avalanche Energy Vs. Drain Current. Current Sampling Resistors. Fig 13b. Gate Charge Test Circuit. T for P-Channel. Package Outline. Dimensions are shown in millimeters inches. Part Marking Information. Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q] market. Learn more about Scribd Membership Home. Much more than documents. Discover everything Scribd has to offer, including books and audiobooks from major publishers. Start Free Trial Cancel anytime.
Document Information click to expand document information Date uploaded Nov 19, Did you find this document useful? Is this content inappropriate? Report this Document.
Flag for Inappropriate Content. Download Now. Related titles. Carousel Previous Carousel Next. Jump to Page. Search inside document. A CurrentDrain-to-Source,. Fig 2.
IRF3710 Transistor. Datasheet pdf. Equivalent