39VF800A PDF

Data Sheet. The split-gate cell design and thick oxide tunneling injector. Featuring high performance Word-Program, the. The devices use Toggle Bit or Data Polling to detect.

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Data Sheet. The split-gate cell design and thick oxide tunneling injector. Featuring high performance Word-Program, the. The devices use Toggle Bit or Data Polling to detect. To pro-. Designed, manu-. Data retention is rated at greater than For all system applications, they signifi-. They inherently use less energy dur-. When programming a flash device, the total energy con-. Since for any given voltage range, the. SuperFlash technology uses less current to program and.

These devices also improve flexibility. The SuperFlash technology provides fixed Erase and Pro-. Therefore the system software. See Figures 1 and 2 for pinouts. These specifications are subject to change without notice.

No Preview Available! Device Operation. Commands are used to initiate the memory operation func-. Commands are written to the device. A com-. The address bus is latched on the falling edge of WE. The data bus is latched on.

CE is used for device selection. When CE is. OE is the output control and is used to gate data. The data bus is in high impedance.

Refer to the Read. Erase operation is initiated by executing a six-byte com-. The Block-Erase. The sector or block. The internal Erase. The End-of-. Erase operation can be determined using either Data. Polling or Toggle Bit methods. See Figures 9 and 10 for tim-.

Any commands issued during the Sector-. Chip-Erase Operation. Word-Program Operation. The Program operation consists of three steps. The first. The second step is to load word address and word. During the Word-Program operation, the addresses. The data is latched on the rising. The Program operation, once initiated, will. See Figures 4 and 5 for WE. During the Program opera-. During the internal Program operation, the host is free to.

Any commands issued during the. The Sector- or Block- Erase operation allows the system. Block-Erase mode. The sector architecture is based on. The Block-Erase mode is. The Sector-. The Chip-Erase operation is initiated by executing a six-. The Erase. CE , whichever occurs first. During the Erase operation,.

See Table. Any commands issued dur-. Write Operation Status Detection. The software detection includes. The End-of-Write detection mode is enabled after the rising. The actual completion of the nonvolatile write is asynchro-.

Toggle Bit read may be simultaneous with the completion. If this occurs, the system may possibly. In order to prevent spurious. If both reads are valid, then the. Part Number. View PDF for Mobile. Silicon Storage Technology. Site map. Contact us. Buy Components. Privacy Policy.

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